BYV32EB-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 2 March 2009 Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plastic
package.
1.2 Features and benefits
∨
High reverse voltage surge capability
∨
High thermal cycling performance
∨
Low thermal resistance
∨
Soft recovery characteristic minimizes
power consuming oscillations
∨
Surface-mountable package
∨
Very low on-state loss
1.3 Applications
∨
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRRM
repetitive peak reverse voltage - - 200 V
IO(AV)
average output current square-wave pulse; δ
= 0.5;
Tmb
≤
115 °C; both diodes conducting;
see Figure 1; see Figure 2
--20A
IRRM
repetitive peak reverse current tp
=2μs; δ
= 0.001 - - 0.2 A
VESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 k?; all pins - - 8 kV
Dynamic characteristics
trr
reverse recovery time IF
=1A; VR
=30V; dIF/dt = 100 A/μs;
Tj
= 25 °C; ramp recovery; see Figure 5
- 2025ns
IR
=1A; IF
=0.5A; Tj
= 25 °C; measured
at reverse current = 0.25 A; step
recovery; see Figure 6
- 1020ns
Static characteristics
VF
forward voltage IF
=8A; Tj
= 150 °C; see Figure 4
-0.720.85V
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